I have been asked to support an intern with the development of a ultrananocrystaline thin film MOS device. We have some already developed ultrananocrystaline thin films of Si-substrates, but i need to deposit a insulative thin film to form the MOS structure.
His project has a close deadline, so I need to find an insulative material that is easily compatible with ultrananocrystaline. My department currently has access to RF magnetron sputtering, evaporation and spin coating, I could access other resources. but the deadline is limiting my options.
I myself have developed MOS devices before using insulative Bismuth based aurivillius structures, but these require annealing at temperatures above 550OC, and do not know how the diamond films would be effected by this condition.
I am currently investigating depositing SiO2 by RF-Magnetron sputtering, but I do not know if it will need post deposition annealing. Also my RF-sputter is only equipped with a pure Ar gas capabilities, and I understand O2 partial pressures are necessary for Oxides.
If anyone can suggest any easily formed insulative thin films for use on ultrananocrystaline diamond films. I would be extremely grateful.
Best wishes
David Coathup
David,
Normally SiO2 is a good insulator and if you sputter it with RF-magnetron you do not need post dep annealing. It will help to have a little O2 (ca. 1%) in the Ar flow to keep the SiO2 stoichiometric. But without O2 you should be ok if the layers you deposit do not get too thick.
Dear Peter.
Thank you for your input. If my device is unsuccessful, I shall tr a smaller thickness.
Best Wishes
David Coathup
Electrical insulators as a new phase state of quantum matter with some bulk gap and some odd number of Dirac formations have recently been entangled with a two-dimensional model by us through an external magnetic field. The magnetic field used has its own impurities so much so that the eccentricity resulting from the turning point of magnetic critical insulation leads to aspects of compilation that have never been revealed by the “approximate approximation calculus” mostly used in a run under such circumstances.
Crystal and electronic structures have given us the topology that have made it likely for us to depend more on over-stuck service rather than on projections that go into manifolds and submanifolds of various dimensions. In additions, fulton heaters in this specific setting of complex systems where technique does not exist for efficient approximation, has led us to find even lower than submanifolds: something like up-submanifolds and down-submanifolds whereby the cloesed set of combining topological insulators itself has become the target in insulating the whole bulk without any regard for the gapless and/or edge services states. This means that the topological insulators that we are working on have been both gapless at surface and without such states so that they might be able to carry a pure spin current. However, this pure spin current is the point where we have made our own initiative provided through the closure of those areas where points cannot satisfy every path from one origin-set of the insulator to another point of it simulacrum. Therefore, we are actually depending on, so to speak, closure models for creating metainsulators, giving yet more models of simulations of magnetic insulators.
The surface of state of spin resolved ARPES works so that the focus of one direction is in Riemannian contrast to the zones that consequently appear throughout the folding holes as borderlines between submanifolds. For this, without any doubt, means that the dimensions of submanifolds where we are working on our different froms have been entangled with ergodicity as the totality of anisotropy that rises from insulation through coupling strength. The simplest form is, of course, happening within a two-dimensional partially anisotropic plane. In the most complex forms, they can even go into the quantum mechanic levels such as N-Hilbert dimension.
Roya Attarzadeh
Don Senior Prof. Reza Sanaye
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