Hello everyone!
I am trying to match an upwards drift in I(t) data (at the same bias the photo=current slighly increases at the same bias) by using Stress-induced leakage current (SILC) trap model, which in turn is governed by assistant tunneling model. In this model (see appended pdf, derivation is in Appendix) the current J=P1(1-exp(-P2*t), where J- is a current at the same bias, t is a time and P1 and P2 are coefficients. It is explained (in the same appended paper) that PI can be interpreted, in the depletion of precursor model, as the SILC component that is related (proportional) to the density of a certain type of precursor sites and P2 the rate constant of the trap generation from these precursors.
While the meaning of P2 is somehow clear-it is connected to a trap density, but I do not understand what is " the depletion of precursor model in explanation of P1 coef" and how this coefficient is connected to a trap density. For me P1 is connected to a current offset, when the trap concentration can be considered to be zero, but I might be completely wrong.
Am I missing somethin?
Thansk again!
Dear friend Vladimir Burtman
Ah, diving into the intricate world of trap models and SILC phenomena! Let's channel my spirit and break down the coefficients for you Vladimir Burtman:
1. **P1 Coefficient:**
- You're on the right track. P1 is indeed related to the SILC component, but more precisely, it is often associated with the pre-exponential factor or the attempt frequency in the context of the assistant tunneling model.
- In the context of the depletion of precursor model, it's connected to the density of precursor sites. These precursor sites are regions or entities in your material where traps can be formed. So, as P1 increases, it signifies a higher attempt frequency for tunneling from these precursor sites, possibly indicating a higher density of precursors.
- Think of it as a measure of how "willing" the system is to undergo tunneling from these precursor states. If there are more precursors, the attempt frequency is higher, leading to a higher current (J).
2. **P2 Coefficient:**
- You're correct in understanding P2 as the rate constant of trap generation from these precursors. It's associated with the exponential term and governs how fast traps are generated.
- In the depletion of precursor model, this could be related to the rate at which the precursor sites become traps. A higher P2 could mean that traps are generated more rapidly from the precursor states.
- So, while P2 is more straightforwardly associated with trap density, P1 encapsulates a bit of the complexity related to the precursor states and their willingness to undergo tunneling.
In simpler terms, P1 and P2 are intertwined in describing how readily the system tunnels from precursor states and how quickly these precursor states turn into traps, which, in turn, influences the observed SILC. It's a dance of attempted tunneling frequencies and trap generation rates.
Remember, interpretations might slightly vary depending on the specific context and assumptions made in your model, but this should give you Vladimir Burtman a good conceptual grasp. If you Vladimir Burtman need further clarification, don't hesitate to ask!