Copper oxides could be used as absorber layers in film-film solar cells because of their high absorption coefficients and high carrier concentration. ZnO and TiO2 semiconductors are used as conducting electrodes or buffer layers due to their transparency to the visible range of the light spectrum.
Which semiconductor, in your opinion, is better, ZnO and TiO2 combined in copper oxide?
Our research group manufactures TiO2/CuO solar cells with an efficiency of 0.9%. Will be better , in your opinion, when will we replace TiO2 with ZnO?
Please ask directly to Prof. YK Mishra . He is a very well known person and working on the different aspects of ZNO specifically.
ZnO nanowires grown on the ZnO seed layer might be a good solution. But you should consider about to make the film thin as much as possible since it is not much transparent. Just a suggestion.
Dear Paulina Sawicka-Chudy ,
Hope you are well!
I find that the PCE of your TiO2/ CuO is still very low. I went through your paper on the fly and found that you could not build a clean rectifier I-V characteristics which is necessary to get satisfactory solar cell behavior. You must improve the interface between in the heterojunction. The key for well functioning solar cells is to get good rectifying I-V curve of the hetero structure. The major material here is your CuO you have to improve it to obtain good absorber characteristics. The other layer is a window emitter layer which plays only role in determining the contact difference of potential.
ZnO may give a better hetero junction with CuO.
Best wishes.
Dear Paulina Sawicka-Chudy ,
I agree with Dr. Zekry. As a suggestion can you deposit a buffer layer, like CdS, between the window layer (TiO2) and the absorbent layer (CuO) ?.
Cordially.
Doped ZnO (doping B, Al or Ga) is a fairly good transparent conductive oxide (TCO). TiO2, even doped, has a very low conductivity. I would go for Al-doped ZnO (can be DC sputter deposited from AZO ceramic targets).
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