Good Morning, I have been trying to understand if by any chances it could be possible to use Tin-Oxide as a gate insulator, from my understanding it would be required for such film to be stochiometric, which is highly unluckily, So I have been wondering if the use of substrate temperature or annealing of the material after deposition could influence the resistivity enough to allow the film to behave as an insulator rather than a conductive layer.

Thanks in advance for anyone who will answer.