There is an SiO2 contamination on SiC film when it is annealed at 800deg for 25min with Nitrogen gas. How does one prevent it?

Adithi Umamaheswara @Adithi-Umamaheswara

17 June 2013 1 3K Report

SiC deposited on Si using PECVD and annealed using Tempress Dry furnace. I did XPS and found SiO2 peak very prominent, more so than Si and C peaks.

Goknur Cambaz Buke

SiO2 is the native oxide of SiC. You can etch it using HF, but it will oxidize quickly again in atmosphere. If you want to do layer process, then you can first reduce it at high temperature in controlled atmosphere and continue the process.

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