There is an SiO2 contamination on SiC film when it is annealed at 800deg for 25min with Nitrogen gas. How does one prevent it?

SiC deposited on Si using PECVD and annealed using Tempress Dry furnace. I did XPS and found SiO2 peak very prominent, more so than Si and C peaks.

17 June 2013 3,143 1 View