Hello, everyone. I have a question about performing TCAD simulation in the group. I would like to implement 2T0C DRAM with two IGZO Channel CAA structure transistors vertically stacked using the Silvaco TCAD program. I would like to ask you because I set IGZO's defects and traps to extract one transistor I-V curve well, but the simulation is not performed properly in the device structure that configured two TRs at the same time(We extracted one TR's I-V curve well). I would like to ask if there are any additional models or characteristics that need to be set up and changed.

I would really appreciate it if you could give me a simple answer(with simple code please).

We are working on novel structure for 2T0C. I would be really helpful if you give us any clue about our problem. :)

Thank you.