I see a plethora of research publications that use non-exact values of effective masses for silicon for both electron and hole at T = 300 K and effective density of states for electron and hole for silicon at T = 300 K. When it comes to choosing the exact values of these parameters, Professor Dr. Robert F. Pierret's two books " Semiconductor Device Fundamentals" and "Advanced Semiconductor Fundamentals" are the two reference books device physicists and modeling researchers should use. It derives the exact T = 300 K effective masses for electron and hole for silicon from T = 4 K reference value and effective density of states for electron and hole at T = 300 K for silicon are accurately mentioned in this book from accurately defined effective masses for electron and hole for Si at T = 300K. Then the intrinsic carrier concentration value for Si at T = 300 K also becomes accurate as per device parameter values given in this book. Practicing referencing the correct device parameters in modeling based research is pretty important for avoiding usage of anomalous device parameters related to publications and the above two books are the best sources for the device parameters mentioned in this connection.
Sincerely,
Dr. Nabil Shovon Ashraf
Associate Professor
Department of ECE
North South University
Dhaka, Bangladesh.
In addition to the discussion I just posted to ResearchGate for research members, both density of states effective mass for electron and hole in silicon at T = 300 K and conductivity effective mass for electron and hole in silicon at T = 300 K, can be calculated from precise values of longitudinal effective masses for electron and hole in silicon at T = 300 K and transverse effective masses for electron and hole in silicon at T = 300 K. Professor Dr. Robert F. Pierret provided these longitudinal and transverse effective masses for electron and hole at T = 300 K starting from T = 4 K for silicon in a table that the researchers can use for strain related MOSFET performance analysis such as mobility improvement which needs to be precise and is very much dependent on correct quoting of longitudinal and transverse masses for electron and hole at T = 300 K after valley splitting. Most of the strain MOSFET related papers published in journals and conferences by researchers did not emphasize correctly selecting the proper effective masses in the transport direction at T = 300 K after valley splitting. Therefore, referencing to these two books are very much crucial for exact determination of proper mobility improvement out of strain in n-channel MOSFET and p-channel MOSFET.
Sincerely,
Dr. Nabil Shovon Ashraf
Associate Professor
Department of ECE
North South University
Dhaka, Bangladesh.
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