Hi all,
I deposit Sb2Te3 thin film 150nm by PVD (sputtering, single target, with low power as much as I can) on SiO2 substrate and anneal it to 200°C with 0.5K/min as rate.
I found some sample got damage and ashes around the films.
I would like to have comments from this issues.
Keep healthy,
Best
I think due to annealing SiO2 property changes further the situation aggrevated by penetration of Sb2Te3 elements.
Around the film means close to the edge of the substrate ?
In that case I am not surprised that despite your appreciable choice to use low power during deposition some local higher temperature due to plasma density variations could develop and then cause ash and local film spallation. You can try to use a substrate wider than the area you would like to deposit in order to avoid the presence of film edges.
In the case the ash and/or delamination are in the whole deposit consider the substrate surface cleaning and at last of course there is the issue of different thermal expansion as reported for example in this paper.
Best regards,
Simone
Article Thermal expansion coefficients of Bi2Se3 and Sb2Te3 crystals...
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