What are the relative capacitances of the cables to and from the RRAM and the RRAM itself. If the RRAM is very small I don't think you will see any effect at all.

Thank you Tony Sir for your valuable suggestion.

Sir, what must be the typical size of RRAM cell? In many literature, i have seen thicknesses in nano-meter range and area in mm2 . We have Triax cables here.

I am not an expert on RRAM but for ordinary RAM the cell size is a few tens of nanometers square (or less). You are NOT going to see any effect at all since the cell capacitance will be measure in attofarads and your cables are hundreds of picofarads. You have to interpose an integrated amplifier between the two devices. Now if you are , for experimental purposes, making the RRAM much bigger as you indicate, you will still have capacitances of the order of 1 picofarad or so while your cables are far far higher. I'm not saying it can't be done - but you will have to measure very, very accurately and look for very small effects. I wish you well with your researches!

Thanks a lot Tony Sir for your kind reply with lots of information.

I will workout as per your suggestions.

Hello Vibhu,

if you want to do a pulsed IV I suggest to actually use a pulse source and not a SMU. SMUs are more suited for DC measurements and typically have a lot of high frequency noise if you plug them to an oscilloscope.

I would suggest to use the 4225 PMU, if you have one installed in your 4200SCS. That will also enable you to actually analyse the capacitic effects you are wondering about by looking at the I(t) curves. But beware you have to use one channel of the PMU for pulsing and the other one for measuring the current , or you will also measure the capacitance of your RPMs.

If you don't have a 4225 PMU you can also use a standard pulse generator and an oscillioscope, but you won't get good results for the HRS that way without using a pre-amplifier.

Regarding your original question: In what way are your results unreliable?

Usually I don't advertise my own papers this way, but if you want some additional information on pulsed IV on RRAM you can look in my EDL paper ( Interrelation of Sweep and Pulse Analysis of the SET Process in SrTiO3 Resistive Switching Memories ) from 2014, it describes pulse IV experiments on STO based RRAM cells.

Best regards

Karsten

you can use capacitances series