It seems the interface states generated would be donor like since the channel region of the MOSFET is p-type and the fermi level would be closest to the valence band. This implies the donor states would be positively charged and would capture an electron when the surface becomes inverted during turn on (vth) of the MOSFET. Once the electron is captured after the surface is inverted, the trapped electron cannot contribute to current conduction in the channel; otherwise it would cause an increase in Rdson and an eventual increase in Vth when the interface trap concentration exceeds the positive charge build up in the oxide. I don't see how acceptor like states would be an issue since the p-type channel and p-body region would be p-type before irradiation. Acceptors would just add more holes... Thanks.

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