I am facing a few problems with my simulation on a Ga2o3 device. I have a fabricated device and I am trying to simulate its behavior to make a comparison. Following are the problems I am facing.
1. Mobility is not affecting the Drain current.
2. Subthreshold swing of the actual device is nearly 500 mV/dec. However I am not able to replicate the same behavior in Silvaco. Maximum SS of my simulated device is around 80 mV/dec