I am trying to pattern a spin coated PEDOT:PSS layer (CLEVIOS PH 1000 + ethylene glycol + dodecylbenzenesulfonic acid + 3-glycidyloxypropyl trimethoxysilane) by utilizing Orthogonal OSCoR 4020 photoresist as an etch mask. I use a plasma asher, running a descum process (50 W, 100mTorr, T=25C, 10 SCCM O2 flow) but it tends to etch away the photoresist faster than the PEDOT:PSS layer.
Has anyone encountered similar issue? Any tips to get get around this?