Hello everyone,
we see a negative peak in my DLTS measurements on n-type 4H-SiC.
(Edit: normal peaks are positiv)
Some background:
Our Epi is 5e17 and we implanted 5e16 and 1e17 Al respectively into two samples each with a Schottky contact. The samples were oxidated and this oxide was stripped befor metallisation.
At about 600K we see a negativ peak with a high amplitude and energies from about 2.9-3,7eV (so partly larger than the band gap) and capture cross sections many times larger than the sample itself (1e-02 - 1e03).
We "know" it can´t be a real point defect but i happens consistently in 8 measurements (two different epis and new contacts) and does not happen in other samples (with lower epi doping).
If anyone has similar experience and/or maybe a theory on what causes this peak, i would much appreciate any help and advice.
Thank you very much in advance!
Kind regards,
Tom Becker