I am trying to make Silk fibroin RRAM by referring to this article (Configurable Resistive Switching between Memory and Threshold Characteristics for Protein-Based Devices)

but my device has too high conductivity at HRS(High Resistance State).

Also, my device is LRS(Low Resistance State) at first sweep without Set process.

Can you tell me what factors caused this problem?

Thank you for your responses in advance.