I want to measure magnetic properties of HfO2 thin films deposited on Silicon wafer. I want to measure its magnetic properties, but I have no idea about its measurement.
It is transparent for (UV) (λ>300 nm) and RI (≈10 μm).
Thin films of HfO2, used in modern semiconductor devices, are often deposited with an amorphous structure on silicium or aluminum, but al is paramagnetic!).
atomic Hf has the cofiguation 1s2 2s2 2p6 3s2 3p6 4s2 3d10 4p6 5s2 4d105p6 6s2 4f14 5d2 giving n=5, l=2 and m=-1 magnetic quantum number, so Hf would be magnetic with spin-orbite coupling and cristalline field interactions
Experimentally, it was reported that HfO2 is ferromagnetic with about 1 Bohr magneton par cell. This ferromagnetism is explained in the itinirent approaches (spin bands).These magnetic properties are very sensible to defects and symetry.
For maore details, see :
1. Pemmaraju C D et Sanvito S, « Ferromagnetism driven by intrinsic point defects in HfO2», Physical Review Letters, 94(21), 217205 (2005).
2. Bouzerar G et Ziman T, « Model for vacancy-induced d0 ferromagnetism in oxide