Hello, I am attempting to create a BSIM CMG SPICE model using Keysight Device Modeling MBP. I am focusing on a specific GAAFET device with fixed dimensions, and I plan to use version 108.

From the BSIM manual, I found that Section 7, Local Parameter Extraction for CV-IV, appears to be relevant.

However, I noticed that this section has not been updated for quite some time (the earliest version I checked was version 105). Some parameters seem to differ, and the content does not align well with recent advancements. Are there any relatively recent papers or books available that provide detailed methods for creating SPICE models for devices with specific dimensions using the updated BSIM-CMG model?

Additionally, I have one more question.

When extracting parameters, IDS-VGS and Gm (transconductance) curves are often used together. Is the Gm curve strictly necessary? From what I understand, Gm is the derivative of IDS-VGS with respect to VGS, so they essentially carry the same information. Why is the Gm curve still used?

Thank you.