Hi,
I usually used RF magnetron sputtering using TiN ceramic target for TiN thin film deposition.
However, i failed to fabricate ferroelectric capacitor when we used TiN as a bottom electrode (using ceramic target).
There is no such phoenomenon when i used reactive sputtering with N2 gas and Ti target for same process.
I wonder there is any difference as a respect of film quality between two different methods.
I assumed that reactive sputtered film is more dense than ceramic target sputtering by the influence of reactive gas (N2), but i couldn't find any papers associated.
If there's something, please let me know.
Thanks for your answer in advance
Deposition rate at pure metal target and reactive process will vary from metal compound target and argon gas...optimisation of power will give you similar results ....otherwise difference in Deposition rate leads to variation in density of film and quality.
TiN is electrically conducting, but it cannot serve as a bottom electrode for ferroelectric thin film capacitor. As sson as an oxide films is deposited and heat treated, or deposited at some temperature in an oxidizing ambinet, the TiN electrode will oxidize and become insulating.
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