Hello all
I am looking for the mathematical relationship (direct or indirect) between the effective density of states in valance band and the external applied field.
Thank you.
Applying a constant electric field E along x-direction means to apply a bias V, where E=-grad V=-dV/dx, hence the change in potential energy for a charge q will be qV=-E ∫dx which will tilt all the bands in the band structure diagram along x direction by an amount proportional to the field.
When electric field is applied coulomb force will be generated in the direction of the E-field, physically the dielectric will be compressed. This will increase the density of the dielectric material.
Electric field will act as an bias voltage on the sample will either retard or accelerate the electrons for photoelectron analysis. It is used to see the whole spectrum in UPS.
Thank you Amir Izzani Bin Mohamed Sir,
In regard to your answer, do you know any reference?
Thank you
Dear Thomas Walther Sir,
Thanks for the reply
In regard to your answer, I would pleased to know the influence of tilt phenomenon on the density of states available for the charge carriers.
Thank you
Hello Engin Ciftyurek Sir
Thank s for the reply.
How the density of states changes with the process of retardation or acceleration of the electrons for photoelectrons on the application of external field ?
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