I observed right shift of peak positions with every instance of decrease in FWHM values in my ZnO: Ga thin films of around 300-500 nm after XRD measurements. Deposition method is DC sputtering.
Usually, FWHM is related to crystallite and grain size and peak shift is usually associated with planar compressive or tensile stress. Right Peak shift can also signifie increased dopant incorporation in film.
So, why do i always get right peak shift with increase in crystallite size? Is there any relation? Does increase in dopnat incorporation has any effect on grain size as observed in my case?