Dear Vaezzadeh,

In the following articles, there is a relationship for it:

Stutzmann, M. "The defect density in amorphous silicon." Philosophical Magazine B 60.4 (1989): 531-546.

Biel, Blanca, et al. "Anderson localization in carbon nanotubes: defect density and temperature effects." Physical review letters 95.26 (2005): 266801.

Regards,

Ender Araujo

See the following papers

1.Effects of As cell temperature on oval defect density and C acceptor concentration of light Si-doped GaAs grown by molecular beam epitaxy

C.Y. Li, D.H. Zhang

https://booksc.xyz/book/2218801/88bac5

2.The influence of ion current density and target temperature on kinetics of accumulation of radiation defects at ion bombardment and on electrophysical properties of silicon doped by implantation of boron and phosphorus: V K Vasilev et al, Struct Defects in Semicon, Coll, Novosibirsk 1973, 247–250 (in Russian)

Magazine:Vacuum

https://booksc.xyz/book/2543966/f82a57

Безусловно есть. Если рассматривать конструкционные дефекты - это связь проявляется на уровне кристаллической решетки.