Dear Mohsen,

welcome,

Any semicondcutor including the perovskite has physical and technological parameters. The physical parameters are the crystal structure with a specific lattice constantband the energy band structure with its parameters are: the energy gap Eg, the effective density of sates in the conduction band NC and the effective density of sates in the valence band Nv, the effective masses in the conduction band and valence band me and mh, the electron affinity X which is the energy difference between the free electron level and the conduction band edge Ec. These parameters are constant for a given material.

There are parameters which cam be changed by a technological means: these are the doping type p or n and the doping concentration Na and Nd the acceptor and donor concentration which can be used to adjust the doping type and doping concentration according to the required semiconductor layer. The doping is used to change the free carrier concentration in the semiconductor. One can change the electron concentration n and the hole concentration p by doping controlling the type and the type of the conductivity for specific device application.

Then comes the mun and mup the electron and hole mobility, respectively. These tow parameters are physical parameters which changes with doping. So, they can be considered physical parameters which can be changed appreciably by doping or by defects in the material.

The parameters of semiconductor material are affected largely by its crystallinity as single crystal , polycrystal and amorphous. These different geometrical structures affect much the mobilities, and the energy gap.

The last parameter is the minority carrier lifetime which is very sensitive to crysatllographic defects and heavy metal impurity in the material. Therefore it varies in a large range from milliseconds down to nanoseconds.

https://pubs.rsc.org/en/content/articlelanding/2015/ta/c4ta05033a#!divAbstract

For semicondcutor characterization please refer to the book: Book Electronic Devices

Best wishes

Dear, Prof. zekry

I greatly appreciate your guidance

I deposited Tio2 by magnetron sputtering RF on substrate ITO. How can i measure minority carrier lifetime and mobility electron and hole in Tio2?

and how can i measure complex reffractive index Tio2 ?