Bragg XRD Microscopy, a NDE tool that has been tried and tested for over a century was limited in spatial & temporal resolution by the detecting device. Presently the state-of-the-art in real time 2D XRD Imaging is fairly advanced and cost effective. This allows us to capitalize on the decades of diligent data collection & experience by conventional tools in XRD, meaning the ubiquitous 0D point/scintillation counter and the 2D photographic film. Using Bragg XRD Microscopy we are able to image the material's Nano structure at a spatial resolution of 20-40um presently. The data displayed here is at 55-80um spatial resolution (detector). Depth of analysis may range from few nm to 10's of um based on geometry & optics chosen.
Someone earlier objected to this for two reasons:
1. Too large a file size attached therefore too cumbersome to download. If you need a high resolution copy of the PP file, email me and I'll send it to you. Meanwhile, I created a YouTube video (37 minutes long) with complete personal narration so you could critique it and I could correct any errors and the monotony. It's a 1st attempt so please bear with the slips. I'll get better.
2. That this was a shameless self promotion and has no place in RG. I see it differently. I see it as a cool tool for those that know and use XRD for routine material Nano structural characterization. Great to confirm and perform real time alignment checks. Can be operated just as a 0D detector with much greater dynamic range. I see it as an advantage I'm presenting to XRD users for any existing diffracatometer system. Operates in the "stand alone" mode with most XRD equipment brands including Rigaku, Panalytical, Bruker, Bede, Phillips, GE Diano, etc. We could demonstrate this on Bragg's original X-ray spectrometer if anyone can make it available?
In my opinion, this would be the ideal tool to prescreen material prior to tedious TEM & SEM sample prep. These XRD images would be of relatively lower resolution 10-80um but require virtually no sample prep. Envision that!
I intend to make a stand and show you folks the efficacy of such an awesome tool! It would be great if we have one of you Electron Microscopy experts verify the XRD Microscopy results using your tool of choice SEM, TEM, AFM. PL, RHEED,............
http://www.youtube.com/watch?v=VSQ-eh-RDx8
Dear Ravi
Very nice, really, you have posted very much informatic and valuable papers.
Thanks
REFERENCES:
Fifty Years of X-Ray Diffraction, Edited by P. P. Ewald. Reprinted in pdf format for the IUCr XVIII Congress, Glasgow, Scotland
Copyright © 1962, 1999 International Union of Crystallography
http://www.iucr.org/publ/50yearsofxraydiffraction
X-ray Diffraction Fundamentals:
1. Bragg's Law and Diffraction: How waves reveal the atomic structure of crystals. http://web.pdx.edu/~pmoeck/phy381/Topic5a-XRD.pdf
2. Paul Barne, Simon Jacque, Martin Vickers; X-ray diffraction peak shapes – Gaussian, Lorentzian (Cauchi), Pearson VII, Voigt, Pseudo Voigt
a. http://pd.chem.ucl.ac.uk/pdnn/peaks/peakcon.htm
b. http://pd.chem.ucl.ac.uk/pdnn/pdindex.htm#peaks
observed Nano-structure: (AFM, TEM, SEM)
3. Atomic force microscopy study of morphology and dislocation structure of InAs and GaSb grown on highly mismatched substrates S. P. Watkins , R. Arès, G. Soerensen, W. Zhong, C. A. Tran, J. E. Bryce and C. R. Bolognesi
http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TJ6-3SP5JF3-6G&_user=10&_coverDate=01%2F01%2F1997&_rdoc=1&_fmt=high&_orig=gateway&_origin=gateway&_sort=d&_docanchor=&view=c&_acct=C000050221&_version=1&_urlVersion=0&_userid=10&md5=d4a8db5523e15b941a4ff52c27315fdf&searchtype=a
Si Standard:
4. Hubbard C R, Swanson H E, Mauer F A; Journal of Applied Crystallography Volume 8, Part 1 (February 1975)J. Appl. Cryst. (1975). 8, 45-48 [doi:10.1107/S0021889875009508 ]A silicon powder diffraction standard reference material C. R. Hubbard, H. E. Swanson and F. A. Mauer (Si STANDARD)
Abstract: A Silicon powder Standard Reference Material, SRM-640, has been prepared for use as a standard in powder diffractometry. Powder diffraction measurements were performed with a tungsten internal standard and a high-angle goniometer. The measured a/ is 3.525176. With (Cu K1 peak) taken as 1.5405981 Å, a = 5.430880 (35) Å, uncorrected for refraction. Comparison of a with values obtained with a single-crystal from one of the boules reveals a difference of 3 parts in 105. This difference suggests a subtle systematic error in powder diffractometry or a change in lattice spacing near crystal boundaries. Use of the SRM should permit individual measurements of lattice parameters to be made reproducible to near 1 part in 10^5 and an absolute accuracy of at least 3 parts in 10^5.
ROCKING CURVE ANALYSIS: The use of X-ray FWHM for determination of dislocation density & EPD correlation!
0-D Conventional RC:
5. Blanton, Thomas N; APPLICATIONS OF X-RAY DIFFRACTION IN THE IMAGING INDUSTRY, Imaging Materials & Media, R&D, Eastman Kodak Company, Rochester, New York 14650-2106 http://www.icdd.com/resources/axa/VOL46/V46_45.pdf RECIPROCAL SPACE MAP
6. Carey, Kent W., A model for interpretation of X-ray rocking curve half-widths in SOS;Hewlett-Packard,1501 Page Mill Road, Palo Alto, California 94304, USA Received 8 July 981. Available online 24 July 2002.
http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TJ6-46BWN8J-18B&_user=10&_coverDate=06%2F30%2F1982&_rdoc=1&_fmt=high&_orig=gateway&_origin=gateway&_sort=d&_docanchor=&view=c&_searchStrId=1743405239&_rerunOrigin=google&_acct=C000050221&_version=1&_urlVersion=0&_userid=10&md5=a0b8b214b65649fa99d57e641524c2f0&searchtype=a
7. Halliwell, MAG - 1984 - Cited by 114 - Related articles; Journal of Crystal Growth 68 (1984) 523531 North Holland, Amsterdam 523 THE INTERPRETATION OF XRAY ROCKING CURVES FROM III-V SEMICONDUCTOR DEVICE STRUCTURES ... http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TJ6-46FVNTK-7N&_user=10&_coverDate=09%2F02%2F1984&_rdoc=1&_fmt=high&_orig=gateway&_origin=gateway&_sort=d&_docanchor=&view=c&_searchStrId=1734530430&_rerunOrigin=google&_acct=C000050221&_version=1&_urlVersion=0&_userid=10&md5=40b80d30a0ee5c247cde20e9e4de4b3e&searchtype=a
8. A. Rey, J. Trilhe and J. Borel , Journal of Crystal Growth Volume 60, Issue 2, December 1982, Pages 264-274 doi:10.1016/0022-0248(82)90099-9 The application of automatic X-ray rocking curves to the characterization of silicon on sapphire
TEM/SEM/RBS/EPD/RC Correlation
9. Tartaglia, J. M.; Crochiere, S. M.; Kalnas, C. E.; Farrington, D. L.; Kronwasser, J. A.; Pearah, P. J. ; A study of etch pit density and x-ray rocking curves for GaAs substrate evaluation; Journal of Electronic Materials, Volume 20, Issue 5, pp.345-352EPD/RC CORRELATION http://adsabs.harvard.edu/abs/1991JEMat..20..345T
10. Wang Qingxue∗, Yang Jianrong, Wei Yanfeng, Fang Weizheng and He Li; Evaluation of Dislocation Densities in HgCdTe films by High Resolution X-ray Diffraction; Proceedings of SPIE Vol. 5640 (SPIE, Bellingham, WA, 2005); http://lib.semi.ac.cn:8080/tsh/dzzy/wsqk/SPIE/vol5640/5640-629.pdf (EPD/FWHM/DISLOCATION DENSITY – Pseudo Voigt Fit)
11. Fred Semendy, Neal Bambha, Marie C. Tamargo, A. Cavus, L. Zeng, and N. Dai; Etch Pit Studies of II-VI-Wide Bandgap Semiconductor Materials ZnSe, ZnCdSe, and ZnCdMgSe Grown on InP ARL-TR-2013 October 1999; http://www.arl.army.mil/arlreports/1999/ARL-TR-2013.pdf (RC/EPD)
12. Hwi Siong Lim, Teik Kooi Ong, Boon Siew Ooi*, Yee Loy Lam, Yuen Chuen Chan and Yan Zhou; Effect of etch pit density of InP substrate on the stability of InGaAs/InGaAsP quantum well laser materials Photonics Research Group, School of Electrical and Electronic Engineering,Nanyang Technological University, Singapore 639798; http://lib.semi.ac.cn:8080/tsh/dzzy/wsqk/SPIE/vol3896/3896-207.pdf (EPD/RC)
13. M. Niraula, K. Yasuda, H. Ohnishi, H. Takahashi, K. Eguchi, K. Noda and Y. Agata,
Journal of Electronic Materials Volume 35, Number 6, 1257-1261, DOI: 10.1007/s11664-006-0251-5 Direct growth of high-quality thick CdTe epilayers on Si (211) substrates by metalorganic vapor phase epitaxy for nuclear radiation detection and imaging FWHM DCD CdTe epi on Si (211)
14. P. Mitra, F. C. Case, H. L. Glass, V. M. Speziale, J. P. Flint, S. P. Tobin and P. W. Norton, Journal of Electronic Materials Volume 30, Number 6, 779-784, DOI: 10.1007/BF02665872 HgCdTe growth on (552) oriented CdZnTe by metalorganic vapor phase epitaxy RC/FWHM/EPD
15. S. J. C. Irvine, J. Bajaj, R. V. Gil and H. Glass, Journal of Electronic Materials Volume 24, Number 5, 457-465, DOI:10.1007/BF02657948 Integrated In Situ wafer and system monitoring for the growth of CdTe/ZnTe/GaAs/Si for mercury cadmium telluride epitaxy RC/FWHM/EPD
16. HJ Herzog - 1994 - CRYSTAL GROWTH Journal of Crystal Growth 144 (1994) 177 186 Analysis of Xray rocking curves from strain relieved heterostructures H.J. Herzog (DCD RC micro-lattice strain) linkinghub.elsevier.com/retrieve/pii/0022024894904537
17. M. K. Öztürk, Yu Hongbo, B. Sarıkavak, S. Korçak, S. Özçelik and E. Özbay, Journal of Materials Science: Materials in Electronics Volume 21, Number 2, 185-191, DOI: 10.1007/s10854-009-9891-6 Structural analysis of
an InGaN/GaN based light emitting diode by X-ray diffraction (RC for mosaic TILT & ROTATION Screw & Edge Dislocation calculation for GaN)
18. Dae-Soon Lim and Steven Danyluk, Journal of Materials Science Volume 23, Number 7, 2607-2612, DOI: 10.1007/BF01111922 Correlation of dynamic friction and the dislocation etch pit density surrounding annealed scratches in (1 1 1) p-type silicon EPD CORRELATED TO CO-EFFICIENT OF FRICTION
19. Xiaohong Chen, Shuping Li and Junyong Kang, Journal of Materials Science: Materials in Electronics Volume 19, Supplement 1, 215-218, DOI: 10.1007/s10854-008-9682-5 Initial process effects on the surface morphology and structural property of the AlN epilayers From the issue entitled "Proceedings of the 12th International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP-XII 2007) ; Guest Editors: Ute Zeimer and Jens W. Tomm" RC/SEM/TEM correlation
20. Michimasa MIYANAGA, Naho MIZUHARA, Shinsuke FUJIWARA, Mitsuru SHIMAZU, Hideaki NAKAHATA and Tomohiro KAWASE, Single Crystal Growth of AlN by Sublimation Method, http://global-sei.com/tr/pdf/industrial/63-05.pdf (TEM/EPD/RC correlation)
21. X. G. Zhang, S. Kalisetty, J. Robinson, G. Zhao, D. W. Parent, J. E. Ayers and F. C. Jain, Journal of Electronic Materials Volume 26, Number 6, 697-704, DOI: 10.1007/s11664-997-0218-1 Structural properties of ZnSy Se1−yZnSe/GaAs (001) heterostructures grown by photoassisted metalorganic vapor phase epitaxy RC related to superior Optical props.
22. J. P. Zhang, H. M. Wang, W. H. Sun, V. Adivarahan, S. Wu, A. Chitnis, C. Q. Chen, M. Shatalov, E. Kuokstis and J. W. Yang, et al., Journal of Electronic Materials Volume 32, Number 5, 364-370, DOI: 10.1007/s11664-003-0159-2 Special Issue Paper; High-quality AlGaN layers over pulsed atomic-layer epitaxially grown AlN templates for deep ultraviolet light-emitting diodes (RC/PL)
23. A. Tromson-Carli, L. Svob, Y. Marfaing, R. Druilhe, F. Desjonqueres and R. Tribou, Journal of Materials Science: Materials in Electronics Volume 2, Number 4, 187-193, DOI: 10.1007/BF00702919 Analysis of rocking curve width and bound exciton linewidth of MOCVD grown CdTe layers in relation with substrate type and crystalline orientation RC/PL correlation
24. T. J. De Lyon, R. D. Rajavel, J. E. Jensen, O. K. Wu, S. M. Johnson, C. A. Cockrum and G. M. Venzor, Journal of Electronic Materials Volume 25, Number 8, 1341-1346, DOI: 10.1007/BF02655030 Heteroepitaxy of HgCdTe(112) infrared detector structures on Si(112) substrates by molecular-beam epitaxy RC/EPD/ Secondary Ion Mass Spectroscopy
25. J. F. Chen and C. R. Wie, Journal of Electronic Materials Structural and electrical contact properties of LPE grown GaAs doped with indium Pages 501-507 Normanski Optical microscope/FWHM/EPD
26. Rey, J. Trilhe, J. Borel, Journal of Crystal Growth Volume 60, Issue 2, December 1982, Pages 264-274 The application of automatic X-ray rocking curves to the characterization of silicon on sapphire; http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TJ6-46BXY13-9V&_user=10&_coverDate=12%2F31%2F1982&_rdoc=1&_fmt=high&_orig=gateway&_origin=gateway&_sort=d&_docanchor=&view=c&_searchStrId=1743374276&_rerunOrigin=scholar.google&_acct=C000050221&_version=1&_urlVersion=0&_userid=10&md5=f5e7724bb89a8200725e5379faab1c9f&searchtype=a
FWHM/RBS correlation
Superlattice XRC
27. Speriosu V.S., Vreeland Jr., X-ray Rocking Curve Analysis of Superlattices, J of Appl. Physics, 56 (6), 15 September 1984, pp 1591-1600
2-Dimensional XRC Topography:
28. Ian K. Robinson and Jianwei Miao; Three-Dimensional Coherent X-Ray Diffraction Microscopy, MRS Bulletin March 2004, p177-181 http://groups.mrl.uiuc.edu/robinson/~ikrpub04/miao_MRS.pdf (30μm spot, Au nano-particle reciprocal space image - Synchrotron)
29. Ananthanarayanan, T. S., "Real Time Reciprocal Space Topographic Characterization of Substrate and Epitaxial Structures of Electronic and related II-VI & III-V Materials", MRS Proceedings Boston, MA, December 2009 (DARC)
30. Ananthanarayanan, T. S., Roserneier, R. G., Mayo, W. E. and Becla, P., Subsurface Micro-Lattice Strain Mapping, MRS Proceedings, 1986. (DARC)
High Resolution Nano-structure Imaging with Real Time X-ray Reciprocal Space Topography! AFRL/WPAFB-Onsight Technology USA Collaborative Research April 2011 Page33
31. Ananthanarayanan, T. S. and S. B. Trivedi, "DARC. A Novel Topographic Technique for Rapid Nondestructive Characterization of III-V Compounds", Defect Recognition and Image Processing in III-V Compounds II, Materials Science Monographs, 44, Elsevier Publishing Co., Presented in Monterey, CA (1987) DARC
32. Ananthanarayanan, T. S., "Renaissance in X-Ray Diffraction Topography", Gordon & Preech, NY (1987) DARC
33. Ananthanarayanan, T. S., R. G. Rosemeier, W. E. Mayo & S. Sachs, "Novel Non-destructive X-ray Technique for Near Real Time Defect Mapping", presented and published at the 2nd International Symposium on the Nondestructive Characterization of Materials, Montreal, Canada (1986), Nondestructive Characterization of Materials II, Plenum Press, NY (1987)DARC
34. Ananthanarayanan, T. S., J. I. Soos, R. G. Rosemeier, D. C. Leepa and A. L. Wiltrout, "Characterizing Process Induced Micro-structural Damage in III-V Materials", Gallium Arsenide and Related Compounds 1987, Institute of Physics Conference Series Number 91.DARC
35. A. Lankinen, T. Lang, S. Suihkonen, O. Svensk, A. Säynätjoki, T. O. Tuomi, P. J. McNally, M. Odnoblyudov, V. Bougrov and A. N. Danilewsky, et al. , Journal of Materials Science: Materials in Electronics Volume 19, Number 2, 143-148, DOI: 10.1007/s10854-007-9307-4 Dislocations at the interface between sapphire and GaN From the issue entitled "Special Issue: Papers from the 6th International Conference on Materials for Microelectronics and Nanoengineering (MFMN2006) Guest Editor: Patrick McNally" (X-RAY TOPOGRAPHY – SYNCHROTRON)
36. P. Mitra, F. C. Case, H. L. Glass, V. M. Speziale, J. P. Flint, S. P. Tobin and P. W. Norton, Journal of Electronic Materials Volume 30, Number 6, 779-784, DOI: 10.1007/BF02665872 Special Issue Paper HgCdTe growth on (552) oriented CdZnTe by metalorganic vapor phase epitaxy ; http://www.springerlink.com/content/42648852032l0j18 (Laue/XRC/EPD)
37. S. P. Tobin, F. T. J. Smith, P. W. Norton, J. Wu, M. Dudley, D. D. Marzio and L. G. Casagrande, Journal of Electronic Materials Volume 24, Number 9, 1189-1199, DOI: 10.1007/BF02653073 The relationship between lattice matching and crosshatch in liquid phase epitaxy HgCdTe on CdZnTe substrates; http://www.springerlink.com/content/64473767575j0x13 (Topography, XRC for dislocation density)
1-D LPSD (Linear Position Sensitive Detector) RC Analysis:
38. Yacici, R, Kalyon, D Microstrain and Defect Analysis of CL-20 Crystals by Novel X-Ray ... http://www.hfmi.stevens.edu/publications/203.pdf
All of Dr. Sigmund Weissmann’s relevant references:
39. R. Yazici, W. Mayo, T. Takemoto & S. Weissmann (1983). Defect structure analysis of polycrystalline materials by computer-controlled double-crystal diffractometer with position-sensitive detector. J. Appl. Cryst. 16, 89-95.
40. W. Mayo, R. Yazici, T. Takemoto & S. Weissmann (1981). Defect structure analysis of polycrystalline materials by computer -controlled double-crystal diffractometer and position-sensitive detector. Acta Cryst. A37, C253
Photographic Film/Topography and RC Analysis:
41. Rocking Curve Analysis - Dr. Sigmund Weissmann (Rutgers) Acta Cryst. (1954). 7, 729-732 [ doi:10.1107/S0365110X54002216 ]An X-ray diffraction method for the study of substructure of crystals J. Intrater and S. Weissmann http://scripts.iucr.org/cgi-bin/paper?S0365110X54002216
42. Acta Cryst. (1954). 7, 733-737 [ doi:10.1107/S0365110X54002228 ]An X-ray study of the substructure of fine-grained aluminium S. Weissmann and D. L. Evans; http://scripts.iucr.org/cgi-bin/paper?S0365110X54002228
43. J. Intrater & S. Weissmann (1954). An X-ray diffraction method for the study of substructure of crystals. Acta Cryst. 7, 729-732.
44. S. Weissmann, Z. H. Kalman, J. Chaudhuri & G. J. Weng (1981). Determination of strain concentration and strain interaction by intensity measurements of X-ray topographs. Acta Cryst. A37, C247.
45. J. Chaudhuri, Z. H. Kalman, G. J. Weng & S. Weissmann (1982). Determination of the strain concentration factors around holes and inclusions in crystals by X-ray topography. J. Appl. Cryst. 15, 423-429.
46. H. L. Glass & S. Weissmann (1969). Synergy of line profile analysis and selected area topography by the X-ray divergent beam method. J. Appl. Cryst. 2, 200-209.
47. T. Imura, S. Weissmann & J. J. Slade Jnr (1962). A study of age-hardening of Al-3.85% Cu by the divergent X-ray beam method. Acta Cryst. 15, 786-793.
48. Z. H. Kalman, J. Chaudhuri, G. J. Weng & S. Weissmann (1980). Determination of strain concentration by microfluorescent densitometry of X-ray topography: A bridge between microfracture and continuum mechanics. J. Appl. Cryst. 13, 290-296.
49. Z. H. Kalman & S. Weissmann (1983). On the X-ray reflectivity of elastically bent perfect crystals. J. Appl. Cryst. 16, 295-303.
50. Z. H. Kalman & S. Weissmann (1979). Determination of strain distribution in elastically bent materials by X-ray intensity measurement. J. Appl. Cryst. 12, 209-220.
51. H. Y. Liu, G. J. Weng & S. Weissmann (1982). Determination of notch-tip plasticity by X-ray diffraction and comparison to continuum mechanics analysis. J. Appl. Cryst. 15, 594-601. .
52. B. A. Newman & S. Weissmann (1968). Strain inhomogeneities in lightly compressed tungsten crystals. J. Appl. Cryst. 1, 139-145.
53. S. Weissmann & D. L. Evans (1954). An X-ray study of the substructure of fine-grained aluminium. Acta Cryst. 7, 733-737.
54. S. Weissmann, V. A. Greenhut, J. Chaudhuri & Z. H. Kalman (1983). Quantitative analysis of intensitities in X-ray topographs by enhanced microfluorescence. J. Appl. Cryst. 16, 606-610.
55. L. D. Calvert, T. C. Huang, M. H. Mueller, P. L. Wallace & S. Weissmann (1993). New ICDD metals and alloys indexes, a powerful materials research tool. Acta Cryst. A49, c443-c444.
56. R. J. Schutz, S. Weissmann & J. Yaniero (1981). The fabrication of a dual-element X-ray divergent-beam target. J. Appl. Cryst. 14, 352-353.
Fourier Analysis & XRC Line Profile Analysis:
57. Podorov S.G, Holzer G, Forster E and Faleev N.N, Semdynamical Solution of the Inverse Problem of x-ray Bragg Diffraction on Multilayered Crystals, Phys. Stat. Sol. (a) 169, 9 (1998)
58. Podorov S.G, Holzer G, Forster E and Faleev N.N, Fourier Analysis of X-ray Rocking Curves for Superlattices, Phys. Stat. Sol. (b) 213, 317 (1999).
59. Aldea N, Tiusan C.V, Barz B, A New X-ray Line Profile Approximation used for the evaluation of the Global Nanostucture of Ni Clusters, J. of Optoelectronics and Advanced Materials, Vol 6, No. 1, March 2004, p 225-235
(Powder RC – GFF Generalized Fermi Function)
60. Gonzalez, R.C., Wintz P., Digital Image Processing, Adison Weiley Publishing Company (FFT etc)
One other objection in the past was the correlation between the words in the term "Bragg XRD Microscopy". Here's the rationale:
Bragg XRD Microscopy" means exactly what it implies.
1. It is microscopic mapping of the Nano structural parameters (Bragg diffraction profile). In our case we've used the Bragg Peak Position & the Bragg Peak FWHM only as parameters from the Bragg profile (RCP/RSP are respectively XRD "rocking curve profile"/"reciprocal space profile"). The RCP/RSP may be used to fully define the Nano structure at each VOXEL of real space parameters.
2. The use of the name "Bragg" is to honor the two Braggs nearly a century later.http://www.flickr.com/photos/85210325@N04/11604959265/. I'll withdraw that name only if someone from the Bragg inheritance objects. Besides the XRD rocking curve method revolves (oscillates) about the Bragg condition at fractions of Arc Sec angular resolution, tantamount to sensitivity in the FEMTOMETER scale when it comes to quantifying the crystallographic lattice strains.
3. The spatial resolution of the method is presently limited to 5-75um pixel size of 2D real time detectors available. The typical dynamic ranges available for such real time devices are 8 to 24 Bit. The typical frame rates range from 5fps to up to 10^6 fps (big bucks!). Active areas range from 10mm to 75mm. The limitation is generally the X-ray incident beam dimensions available in the XRD mode. 27-30mm is the largest we’ve seen yet. I’ve barely “scratched the surface”.
Do feel welcome to examine the following links to get more publicly available data on this subject matter both in LI & RG. We invite you to join our Linkedin group, “X-ray Diffraction Imaging for Materials Microstructural QC” through the links below. I see a huge advantage of this method for the electronic manufacturing as well as R&D in the present and future. We have some exciting data acquired at the BNL & AFRL that could use your scrutiny and critique.
a. Related LI discussion for further info: http://www.linkedin.com/groupItem?view=&gid=2683600&type=member&item=5835507264106037248&commentID=5836586312479576064&report%2Esuccess=8ULbKyXO6NDvmoK7o030UNOYGZKrvdhBhypZ_w8EpQrrQI-BBjkmxwkEOwBjLE28YyDIxcyEO7_TA_giuRN#commentID_5836586312479576064
b. Related RG discussion for further info: https://www.researchgate.net/post/What_challenges_are_there_regarding_obtaining_a_diffraction_pattern_for_a_particular_compound
c. Bragg XRD Microscopy, the whole story in YouTube videos: http://www.youtube.com/watch?v=l82OeCnrB58&list=PL7032E2DAF1F3941F
More to come based on your motivation……
http://www.youtube.com/watch?v=dFCQS8oUyT0&list=PL7032E2DAF1F3941F
Dear Ravi
Very nice, really, you have posted very much informatic and valuable papers.
Thanks
The statement "...XRD images would be of relatively lower resolution 10-80um..." means that this techniques is not relevant to anything that I am involved with (thin films).
@Adam: the technique evolved lately, it is possible in certain circumstances to go down to a lateral resolution of 10 nm or even below. In imaging. Of course, it is not anymore 'direct imaging' but some reconstruction algorithms are behind in order to reconstruct 3d volumes with lateral voxel sizes in the 10 nm range. Techniques based on holography (Bragg holography) or the so called coherent diffraction imaging (CDI) are such examples. Ptychography like approach also possible in Bragg geometry. They do use Bragg signal / contrast. You can have a look at some of the papers in my profile and the references cited in there (used to work a little on this field), or, even better and for more recent publications, one of my collaborators of that time, Ana DIAZ (see also her list of co-authors, which are deeply involved in the field)
Dear Professor
Thank you very much,
As per your opinion, XRD analysis is not meaningfull for the thin films?
Adam! What kind of thin films do you work with? I'll check your profile as well. The 10-80um resolution is the sampling spatial resolution and not the Nano structural resolution within the VOXEL examined. It only determines the minimum sampling VOXEL size on the sample. The Nano structural resolution within any VOXEL is in the FEMTOMETERS using Bragg XRD Microscopy! The spatial resolution of 2D detectors, in my knowledge, presently is around 1um (big buck$), yes?
XRD Rocking Curve Analysis or the X-ray Rocking Curve method is routinely used to quantitatively evaluate the Nano structure of epitaxial thin films. With polycrystalline or Nano grain size thin films the analysis would be a little different as would the choice of XRD optics. Here is an example of a MBE grown super lattice of InAs/InAsSb 25nm period, 10 periods, 0.5um thick on (001) GaSb substrate. We estimate the X-ray penetration depth of about 12-15um below the surface. That provides us the distinct signal of the GaSb substrate as a constant reference standard at each 2D pixel (76um) of the detector and topograph.
Original data from AFRL/WPAFB YouTube video with all the details: http://www.youtube.com/watch?v=De_Nh7iN6y4&list=PL7032E2DAF1F3941F
Thanks for the references Cristian! With a synchrotron many things are possible. Please note that all the data displayed and analyzed are from conventional laboratory sources operating @
With highly oriented Nano thin films you may use the method to quantify "preferred orientation". Example below is for 2 different store brand (X & Y) rolled household aluminum foil 0.2mm (200um) thick in transmission Laue mode with severe deformation and "preferred orientation". The sensitivity of the real time 2D diffractogram to the "preferred orientation" is obviously apparent. The conventional linear equatorial scan diffractogram is shown in contrast besides the 2D image using the Rigaku MiniFlex with similar optics but in reflection mode:
Real Time Bragg XRD Microscopy 2014:
Figure 1. Real time Debye-Scherrer camera data from BNL beam line X14A for a LaB6 powder sample whose particle size (
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