Dear all,

I want to do the implantation in a SOI wafer through the device layer which is n-type (phosphorous) with initial resistivity of 10-20 ohm.cm (which leads to a concentration of around 1e15 cm^-3). The device layer thickness is around 200nm. I was wondering to ask if it is possible to do the BORON doping in that sample? I should mention that I want the final sample to be highly doped with a concentration of around 1e19 cm^-3.

Thanks for your consideration