at high temperature (350-400C) is it possible residual argon can etch away the film in chamber
Dear Chetan,
If I understand your question correctly you want to know if the film that is sputter deposited (RF or DC) can be etched out (re-sputtered) at the same time?
To answer: yes during the sputter deposition of film on the substrate re-sputtering of the deposited film do happen. Saying so you must understand that entire film that was deposited cannot be completely re-sputtered (or etched off as you say). I would like to add a little bit more that you can reduce this re-sputtering by keeping the partial pressure of the sputtering gas a little higher than what you normally do. Of-course this will reduce the sputtering rate, but the films will be smoother.
Thank you shovit bhattacharya sir is this etching is affected by temperature?
Hi
Temperature enhanced sputtering normally is not an issue for solids being etched by noble gases. However, is is rather common if chemical etching is involved ( i.e. carbon erosion by hydrogen or nitrogen plasmas). For liquid substrates, some sort of sputtering enhanced evaporation may also occur, but at rather high temperatures...I wouldn't expect any noticeable change of sputtering yield of common solid targets by noble gases....
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