Thanks Yaksh for your reply. Can you provide some references of your answer. Upto 900 deg annealing temperature I got stable PL peaks for phosphorus implanted samples ,however when annealing temperature was increased to 1000 deg,those PL peaks got broader,so is it due to the reason that phosphorus came out of the wafer and if not then what could be the reasn of showing this type of nature by PL.?
Please refer to Karthick Murukesan's papers, he was M.Tech under Prof Arora, and he had some papers on Boron out diffusion. It'll be available on Prof. Arora's webpage under list of publications