I want to use MOCVD to grow ohmic contact electrode layer of n-type GaN, but all the literatures I have read are grown by sputtering or evaporation method. Can the electrode be prepared by CVD method?
I want to prepare Ti (or Hf) /Al/TiN on N-type GaN as ohmic contact electrode, but I don't have any sputtering or evaporation system, only MOCVD, so I wonder if this idea is feasible?
Dear Jojo,
welcome!
Metallic electrodes are normally produced by evaporation of sputtering.
I do not understand why you use MOCVD to epitaxially build the metal electrode.
I doubt that the deposited metal will grow epitaxially on the GaN.
If you give more information about you structure that you want to build, then one can give more precise answer. Which material you want to use for the electrode?
From the conceptual point of view you can use any deposition method so long as it results in the layer which you need and the process is compatible with the substrate.
Best wishes
You can select material considering the work function. Do annealing after deposition and optimize the annealing temperature.
Study the paper" Barrier Height Control of Metal/n-In0.2Ga0.8N with an Ultrathin Interfacial Layer "
Guo, J. D., M. S. Feng, R. J. Guo, Fu-Ming Pan, and C. Y. Chang. "Study of Schottky barriers on n‐type GaN grown by low‐pressure metalorganic chemical vapor deposition." Applied physics letters 67, no. 18 (1995): 2657-2659.
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