The point is, when deposited on the heated substrate, the atomic layer (Silicon) is much smaller than when deposited on the substrate at room temperature (all other conditions were the same, the deposition velocity was calibrated by quartz, Si atoms were deposited from heated silicon plate in UHV).
I think, that diffusion process is extremely unlikely under these conditions, so maybe the reason of this effect is elastic scattering of Si atoms?
Can anyone advise me on literature on this issue?
Generic quantum mechanics (optical theorem) tells us that the cross section for the elastic scattering is always higher than the cross section for the inelastic scattering. So elastic scattering is always present while inelastic scattering is optional. With respect to the Si surface--I know nothing about it.
It depends on the substrate temperature and the nature of what you're deposing in if you're deposing the Au on silicone, so you'll see the diffusion of the silicone on the surface of your thin films due to the diffusion of the silicone in the gold matrix
What you see might be very fast desorbtion due to the available thermal energy.
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