Is anyone watching the significant SEM image drift (top-down or bottom-up) during the study of cross-sectional views of "conductive thin film/Si" structure? This drift is very undesirable in determining the thickness of the thin film by SEM. The value of the drift varies sometimes from sample to sample. Is this fact associated with our microscope or with our samples? The used equipment - SEM Leo-1450. Sample preparation is simply chipping the Si substrate along the scratched line without additional conductive coating deposition.