Can anyone help me in Secondary ion mass spectroscopy study. I have grown thin films on glass substrates and I wish to know the elemental composition with the depth profile. If anyone have such facility then please let me know.
We have ToF-SIMS in International laser centrum in Bratislava, Slovakia. If you don't have problem to send your samples to us, they can be measured. Please contact my boss: Dusan Velic ([email protected])
I should say that SIMS is not a quantitative technique due to matrix and topographical effects! Although in metallurgy and microelectronics the quantitification with some sort or simplification is possible, it requires a lot of standard samples analyses that have composition similar to your sample. That will compensate the matrix effect. With topographz effect, in ToF-SIMS zou maz normalize the acquired ION IMAGE to the total ion count image. Also AFM before and after analysis is essential. I would say it is very time consuming. Personally I follow only the ion signal in derpth profiling or lateral image without aiming at elemental composition. If you really would like to get it, make XPS depth profiling with Ar cluster gun or C60.
However, SIMS has a lot of other advanteges - fast depth profiling (e.g. 1 hour instead of 1 night in XPS), high sensitivity (1 ppm), possible 3D reconstruction. Nevertheless non quantitative.
Hi you should probably think about your film thickness first and then decide which SIMS technique you want to use. I suggest that you try maybe the relatively more surface sensitive technique, ToF-SIMS (using sputtering for depth profile), if your film thickness is only a few nm (or slightly greater), and maybe NanoSIMS if the thickness is much greater than 10 nm. Bear in mind, quantification of SIMS data is difficult as addressed by those previous answers.
I am getting SIMS done over my samples at NPL delhi. Check their website.
http://www.nplindia.org/
- Badges
- Science topic
- Similar topics
- Correction