I am going through a research paper "Investigating the performance of formamidinium tin-based perovskite solar cell by SCAPS device simulation" the research have changed the absorber doping in the simulation. Correct me if I am wrong, we cannot do doping in SCAPS. Why and how the researchers change the Absorber Doping in simulation. Solar cell is tin based perovskite solar cell. Moreover, the performance of the cell increases when the doping concentration is being increased from 10^14 to 10^15. The optimum value has been selected as 10^15. What is the theory behind doping concentration in tin based perovskite solar cell and why does it increases when the parameters are changed?
Actually, you can change doping in SCAPS by defining a NA or ND concentration at the specific energy level.
You define it as an absorber property. Hope this helps.
Doping leads to the alteration in the charge carrier concentration, which can be adjusted by acceptor(Na) and donor (Nd) carrier concentration.
Priyanka Roy I am glad you have replied to the discussion. Can you elaborate it more theoretically in a simple way like what happens when charge carrier concentration is altered? how can we alter charge carrier concentration?
Hello Gui Hassan Talpur,
As doping is done, this leads to the alteration in acceptor and donor carrier concentration leading changes in overall charge carrier concentration. Basically as doping concentration increases, the carrier concentration of that material also increases. From basic semiconductor physics you might be aware of the relationship between built in electric field and acceptor and donor carrier concentration. (Exact relationship can be found from here https://electronics.stackexchange.com/questions/252702/relation-between-built-in-potential-and-doping). Basically as doping increases the built in electric field also increases, thereby enhancing the overall device performance. As high built in electric field ensures efficient charge carrier separation at the absorber layer with minimal recombination. It is very important to evaluate optimum doping level to get better performance of solar cell. Upto my knowledge, I have studied about MASnI3 (it's P-type) based PSCs, there is an optimum range of charge acceptor concentration in which high power conversion efficiency is obtained, beyond and above that particular range comparitively lesser PCE has been obtained. It doping concentration is higher than the optimum level this will increase the carrier recombination leading reduction in the performance parameters.
On a simpler way: doping increases carrier concentration, and carrier concentration has impact on the built-in electric feild of the solar cell. This analysis is carried out to find out the optimum range of allowed carrier concentration beyond which performance doesn't depletes due to recombination.
Hope this helps!
Good luck😊
Thank you Priyanka Roy this was very helpful understanding the concept.
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