Norberto Boggio The ECV profile of an intrinsic silicon wafer shows flatband voltage, accumulation, depletion, and no inversion regions, indicating that the capacitance remains relatively constant beyond the depletion region due to the absence of dopant atoms. Doping a silicon wafer with boron or phosphorus introduces additional charge carriers, altering the ECV profile by shifting the flatband voltage, extending the depletion region, and increasing the inversion region. The capacitance values and voltage ranges of a material can differ based on factors such as doping concentration, wafer thickness, and measurement conditions. High doping concentration leads to narrower depletion regions for p-type and n-type silicon, sharper inversion layer formation, and lower voltages.

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