Dear M.r Shallouf, I am not an expert, but it looks like a memristive behavior with threshold (K. Eshraghian et al. "Memristive device fundamentals

and modeling"). However, more studies should be done to check the nonvolatility.

Dear Khalifa Shallouf Sir,

The figure shows the pinched hysteresis loop in I-V plane, so it can be a memristor but upper and lower threshold voltages shows some anomalous characteristics. So, you recheck the that characteristics first and you also characterize the your sample for endurance characteristic, retention characteristics for ReRAM application.

All the best for your work ("If it is worth doing, it must be worth publishing” ==== Prof. H.C. Brown)

Thanks dear Peiman ... Thanks dear Dongale .

Could you please give me a short hint how to determine endurance characteristic .

another question please : is this  anomalous characteristic of the  upper and lower threshold voltages considered as a disadvantage for the memristor?

Thanks an advance.

You can use the Keithley 4200-SCS Parameter Analyzer for endurance characteristic and retention characteristics.

Thanks a million for all.

Device is a resistive switching device for sure.. for ReRam application you need to check the storing an endurance ability of device..  you can test the device using voltage pulse .. instead of voltage ramp.. give a voltage pulse and read the state of device using another small signal voltage pulse.. repeat for different voltage pulses ... So you confirm that device is able to retain it's previous state .. memory property and repeating for many pulses confirms the endurance ... For state of art you need to also see the read write speed and power consumption.. other factors that need to be addressed is the ability of your device to make large array (cross bar network) and compatibility with current fabrication facilities