Want to know the reason behind random trend of optical and electronic behaviour of thin films deposited at different oxygen content.In terms of optical properties bandgap first increases then decreases..a random kind of behaviour..what are the reasons behind this..how can we obtain the stoichiometry of the deposited films..
Dear Nisha,
the question is not clear to me - do you want to learn about the stoichiometry of your films? Then XPS (photoelectron spectroscopy) or EDX or XRD (electron or X-ray excited X-ray analysis) can help to identify the elements within your sample and the composition.
If you want to learn about the best preparation for a film with well-defined properties, then the story is more complicated. If you deposit your films with different qmount of oxygen in your sputtering atmosphere, then e.g. the deposition rate will change because the rate is mostly influenced by the content of argon within the gas and by an increased amount of oxygen, the sputter target may be poisened by the oxigen, so an oxide layer is formed on the target, and the sputter rate is smaller for an oxide compared to a pure metal target.
Last not least if you need to sputter longer to obtain the same thickness of a layer, the growing film may get more heat from the sputter plasma and thus may change its strucutre and properties during growth. To get more information on this, X-ray or electron diffraction as well as Raman spectroscopy may give information!
Good luck, Dirk
I think you should also check a contamination state of C elements from RF sputter method. To obtain a high-quality film using the sputter method, you should (1) keep a good base pressure and (2) need an enough time of target outgassing.
It seems to be that you have many phases MnOx with different x
It is usual... Of course the properties will be different
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