Dear Sameera Saeed

You may want to take a look at the following data below:

ZnO thin films deposited by chemical bath deposition (CBD) have been studied using x-ray diffraction, scanning electron microscopy, electron microprobe analysis and electrical measurements. The optimum CBD conditions for achieving structured, but adherent, ZnO films are as follows. Zinc acetate (0.0188 mol l−1) and ethylenediamine (0.03 mol l−1) are mixed. The pH of the bath is raised by addition of a base (0.5 mol l−1, NaOH). The solution is maintained at a temperature between 60 °C and 65 ° C, while the bath is continuously stirred. We proceeded to anneal in room air for 30 min at 300 °C and under vacuum for 2 h at 300 °C. All the films obtained are nearly stoichiometric ZnO films crystallized in the usual hexagonal structure. As expected, the films are rough and porous. The main difference between the two ZnO film families is their conductivity. The conductivity of the films annealed under vacuum is five orders of magnitude higher than that of those annealed in room air.

https://www.researchgate.net/publication/230965281_Properties_of_ZnO_thin_films_deposited_by_chemical_bath_deposition_and_post_annealed

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ZnO TFTs prepared by chemical bath deposition technique with high‐k La2O3 gate dielectric annealed in ambient atmosphere

• P. Gogoi, Rajib Saikia, +2 authors Sanjib Changmai
• Published 1 April 2015
• Physics
• physica status solidi (a)

In this paper, the electrical properties of top‐gated thin‐film transistors with low‐cost chemical bath deposition (CBD) of ZnO as active material and a high‐k rare‐earth oxide La2O3 as gate dielectric have been reported. The source‐drain and gate electrodes and dielectric layers are fabricated by thermal evaporation techniques in high vacuum of the order of 10−6 Torr in a coplanar electrode structure. The channel length of the TFT is of 50 μm. The fabricated TFTs are annealed at 500 °C in air. The TFTs exhibit a field effect mobility 0.58 (cm2 V−1 s−1). Use of a high dielectric constant (high‐k) gate insulator reduces the threshold voltage and subthreshold swing of the TFTs. The TFTs exhibit a low threshold voltage of 4 V. The calculated values of gain–bandwidth product and subthreshold swing are also evaluated and presented. The ON/OFF ratio of the TFT is found to be 106.

https://www.semanticscholar.org/paper/ZnO-TFTs-prepared-by-chemical-bath-deposition-with-Gogoi-Saikia/7fdf97f27c77f39faf2cec3ff7012270426a36f1

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Dear Sameera Saeed,

Though there are several papers available online reporting the deposition of ZnO by CBD approach. Thus, for the deposition of undoped ZnO via CBD, you can simply follow any of these available papers, such as;

1.Article Structured ZnO thin films grown by chemical bath deposition ...

2.Article Growth and Electrical Properties of ZnO Films Prepared by Ch...

3.Article Chemical Bath Deposited ZnO Thin Film Based UV Photoconducti...

etc.

However, I didn't find any paper in which the CBD method has been applied for the La-doping in ZnO. Still, the following paper reports on the preparation of La-doped ZnS thin films via CBD:

1. Optical Characteristics of La-Doped ZnS Thin Films Prepared by Chemical Bath Deposition (DOI: 10.1088/0256-307X/28/2/027806)

Thus, for further La-doping in ZnO, you can get an idea from the aforementioned paper.

I hope this may help you.

Kind regards,

Usman Ali Shah

Thanks for all who answered my inquiry, i benefited from all comments