the above structure is taken from "Exploiting Steep Sub-Threshold Swing of Tunnel FET for Energy-Efficient Leaky Integrate-and-Fire Neuron Model"
you have Vdd and Iin as voltage and current sources. To define voltage and current sources, you can use the command
System{
Vsource_pset vdd (in1 0) {dc = 1V }
Isource_pset Iin (in2 in1) { dc = 0.1uA }
NTFET ntfet1 ( "source"=0 "drain"=in2 "gate"=in2 )
}
Here NTFET is the device (black box) defined at the top of sdevice like
Device NTFET {.......}
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