I am working on IGBT where i need to compare my device performance in terms of forward voltage drop by varying Life time of carrier in each region. can any one specify how to incorporate life time changes in synopsys TCAD.?
Dear Vudumula,
spatial lifetime profiles can be added with the help of SSE (Synopsys Structure Editor). Details about incooperation are described in chapter 16 Generation-Recombination of SDevice manual
(formerly inside of ISE TCAD suite this could be done very gently with help of MDRAW, maybe it is also available inside SSE in MDRAW emulation mode)
If each region is specified as a different material then adjust the Shockley-Read-Hall, Band-to-band (Radiative), and Auger recombination in each region individually. If they are all specified as the same material then your options are more limited. Set the default Radiative and Auger recombination parameters then use a modified doping dependent Shockley-Read-Hall. I don't think you will be pushing your simulations into high level injection conditions.
Now if you are talking about voltage standoff then you have to include the impact ionization coefficients. Be careful how you set up your mesh, or how the program sets up the mesh, to avoid any field spikes, especially at boundaries of contacts and material regions which would cause unrealistic breakdown in the simulation.
Hillo all
I am working with TiO2 semiconductor based on DSSCs, I am interesting to electron life time measurement but I don't know how I can di this measurement, can any one specify how to measure life time in TiO2 semiconductor.?
Check out picosecond transient grating or time resolved photoluminescence for lifetimes, if you want to infer from diffusion length and mobility measurements then use modified shockley-hanes, I doubt you would be successful using EBIC because of charging
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