I have fabricated an OTFT, and I have a Signatone probestation and an Agilent E4980A LCR meter, How can I measure current versus voltage (I-V analysis) so that I can characterize it?
measure the resistance using voltage sweep. This will allow you to calculate current from I=U/R
Set gate voltage of OTFT to a "voltage bias", make source connected to ground, sweep the voltage in drain, can get the I_drain with the function of source/drain voltage. It 's output characteristics of OTFT.
For transfer characteristic, set drain voltage to a "voltage bias", make source connected to ground, sweep the gate voltage, you can get I_drain-V_gate.
The organic thin film transistors are characterize like any FET tranistor.
- You can measure the C-V characteristics of the transitory sussing the RLC meter by scanning the biasing the gate capacitor with a specific DC controlling voltage and measure the small signal capacitance.
- You can measure using the probe station the output characteristics of the tranistor
ID= f( VDS, VGS) where VDS is changed contentiously and VGS is changed in steps.
- You can measure the transfer characteristics of the transistor by the probe station.
There is also measuring instructions in the manual of the probe station and the RLC meters.
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