We are finding a hard time to strip of residual HSQ ( Fox 16) after using it as a mask in etching? We are coating 600 nm thick HSQ and writing with 3000 microC/cm^2 dose at 1 nA current. We are developing in 25% TMAH and after development process we can strip off it easily by dipping it to 6:1 BOE ( buffered oxide etchant ). However, when we are doing argon sputtering in oxford etcher and using developed HSQ as a mask layer, we are unable to remove residual HSQ even if we dipped into 6:1 BOE for 25 mins. Your guidance will be highly appreciated. Thanks
Uday Saha
Thomas Breuer
Thanks a lot for your kind reply. I was currently doing 30 mins O2 plasma + 5 mins BOE etching to remove the HSQ. However, I am facing a problem. When I am etching less meaning there is a higher thickness of HSQ remained after etching, I was unable to remove with 30 mins O2 plasma+5 mins BOE. What should I do in that respect.FYI: O2 plasma I am using 200 W Rf power with 100 sccum O2.
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