09 December 2020 2 6K Report

We are finding a hard time to strip of residual HSQ ( Fox 16) after using it as a mask in etching? We are coating 600 nm thick HSQ and writing with 3000 microC/cm^2 dose at 1 nA current. We are developing in 25% TMAH and after development process we can strip off it easily by dipping it to 6:1 BOE ( buffered oxide etchant ). However, when we are doing argon sputtering in oxford etcher and using developed HSQ as a mask layer, we are unable to remove residual HSQ even if we dipped into 6:1 BOE for 25 mins. Your guidance will be highly appreciated. Thanks

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