quick summary: I am looking for a way to slow down lift-off (1165 or acetone) for a given material system (changing materials to solve the problem is not possible)
This is a relatively general question. I have a given material system which presents low adhesion between semiconductor and metal (But imparts certain desirable properties). Lift-off is then not impossible but is completely done in under 5 minute and invariably leads to undesired loss of deposited metal. I would like to slow the process down (mainly for convenience and reproducibility). I am going to try IPA dilutions and active cooling as 2 approaches.
Has anyone ever tried these or other methods to slow down lift-off ?
Teymour Seymour Talha-Dean It depends on your PR and process parameters used during exposure/post-exposure. Sometimes, the manufacturer recommends NMP and DMSO over acetone to remove PR/ lift-off. The process can be accelerated by heating, for example, DMSO in the 60-80 C range. Please see the technical specifications for more details.
Teymour Seymour Talha-Dean is it possible to deposit the metal as a blanket, pattern it and then do a wet chemical etch? perhaps if the metal is uniformly coated as opposed to having side wall coated PR as is the case in liftoff the metal would have higher integrity to the substrate.
Best of luck.
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