i'm working in Counter electrode. The device architecture is TiO2 | N719 dye | I-/I3- | rGO & dopents. I'm receiving above 20 above mA/cm-2 and FF is 0.34. How should I improve the fill factor
Fill Factor(FF) is affected by Power Conversion Efficiency and Shunt/Series Resistances in your DSSC.
Shunt Resistance is affected by junctions (which I assume you are working on) and Series Resistance is under the contribution of uniformity of nano particles you are using, their size and etc.
You mentioned that you are working on counter electrodes(CE). Did you perform any survey on the effect of CE on your DSSC's FF? If not; I strongly recommend using Electrochemical Impedance Spectroscopy (EIS) as a powerful tool to measure impedance of DSSC in its different sections.
A.R.Fattahi
Regards
Many factors can affect the FF including temperature the type of voltage and energy conversion efficiency beside increasing the Voc and Isc values
Hi
Low fill factor is commonly observed in DSSC based on rGO counter electrodes. this is because of the high charge transfer resistance (RCT) of the rGO electrode. High charge transfer resistance is observed because of the stacked structure in rGO films. There is complex electrolyte diffusion in the stacked structure, which limits the electrocatalytic reaction. One of the potential strategies is to avoid this stacking-induced high RCT is to make 3D orientation and porous assemblies of carbon materials. This can be done using some active spacer materials in rGO, e.g activated charcoal, or graphene quantum dots. also holey graphene has better performance than simple rGO. Please have a look on these works:
Article Activated charcoal and reduced graphene sheets composite str...
Article Graphene quantum dots induced porous orientation of holey gr...
Fill factor is controlled by the internal impedance of the solar cell, mainly contributed by the counter electrode.
My regards.
Mumtaz Ali, Mohamed Mokhtar Mohamed and Ali Reza Fattahi thank you for your clarifications
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