we have a mini pecvd system and i am trying to deposit DLC films on Si/glass substrates. The have Methane, Argon and N2 gases available. i put the samples inside the chamber and pumped it down after that i insert Ar diluted methane in 60, 40 sccm respectively and ON the RF plasma . according to a reference paper i used the same recipe but can't succeed. can anyone suggest me that what i am doing wrong?.
The url of reference paper is given as
Article Dependence of the physical properties DLC films by PECVD on ...
Dear Shah fahad Yousafzai ,
In order to have the same results of the paper, you would need to have the same PECVD chamber under exact same conditions. Plasma deposition is highly dependent on the physical characteristics of the plasma reactor. In other words, to have comparable results you would need to characterize your chamber through a calibration curve of deposition rate vs. Power and then perhaps apply a factor assuming you know the characteristics of the reactor in the paper. I would recommend to start by getting the deposition rate calibration of your own chamber.
Hope this helps.
In addition to the suggestions of Martin that I agree I suggest you to verify if you have the base conditions to have deposition of DLC: gas pressure in the order of approximately 1-50 Pa; CH4 outlet not to close to the pumping flange, no holes in the chamber or cavity where the plasma can ignite and dissipate the power strongly reducing your deposition rate.
In this sense I suggest you to take a look at the plasma during the deposition by putting a glass window in the chamber door and check where the plasma light is on ...
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