I fabricated some memristors but when I try to form them for the first time they broke down. The structure of memristors is Ta/TaOx/Pt. TaOx layer is about 6-8 nm and two electrodes are circa 200nm. I read some papers to find out how it should be but I am not for sure if I do the exact procedure or not. I'd deeply appreciate if someone can explain how to form a memristor explicitly.
Does it means the device broke down after your electrical characteristic measurement?
If the device broke down, one possibly reason is too high voltage was applied. Less voltage is preferable for first trial (from negative to positive and vice versa) and gradually increases, until you get what you want, maybe you want to observe hysteresis in your I-V curve for current stage.
I mean when I'm trying to form a memristor with the Ta/TaOx/Pt structure, the device is highly resistive at low voltages but increasing current resulted in hard breakdown. briefly the memristor does not show a memristive behaviour. theoretically, I know how to form a memristor but I doubt what I have done practically is correct or not.
Anupam Ghosh Faisal Budiman
Hello Mr. Mohammadian ,
in my experience, for a first try it is best to run a slow voltage sweep (
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