Dear Researchers,

I have fabricated a device consisting of antimony-doped tin oxide (ATO) and a layer of copper sulfide (CuS). I am currently working on characterizing its electronic properties and need to determine the Richardson constant (A)* for this device.

From my understanding, the Richardson constant is crucial for analyzing thermionic emission in semiconductors and can be calculated using the following relation from the Richardson-Dushman equation:

J=A∗T2exp⁡(−qϕBkT)J=A∗T2exp(−kTqϕB​​)

where:

• JJ is the current density,
• TT is the temperature,
• qq is the electron charge,
• ϕBϕB​ is the barrier height,
• kk is the Boltzmann constant,
• A∗A∗ is the Richardson constant.

By determining the Richardson constant, I aim to calculate the barrier height (ϕBϕB​) from the current-voltage (I-V) characteristics of the device. However, I am unsure how to experimentally determine A∗A∗ for my specific material system (ATO/CuS). Could anyone provide guidance on the following points?

Any advice, references, or insights would be greatly appreciated!

Thank you in advance for your help.

Best regards,