- I have been trying to Design an enhancement mode high electron mobility transistor. The normally off operation is being achieved by implementing AlGaN/GaN/AlGaN/InGaN/GaN heterostructure. It is a double quantum well structure. The primary quantum well is formed in the GaN layer(2nd) and the secondary quantum well is formed in the InGaN layer. The carriers for drain current are populated in the shallower primary QW through energy band bending with positive VGS. Participation of the concerned QW in drain current conduction depends upon the magnitude of the band offsets and polarization effects of the materials.
- Can I use any other material or a slightly different approach to achieve better operation?
Rajiv Thakur
Dear Jayati Routh,
Check out the links below it may be useful
1. https://www.mdpi.com/1996-1944/12/10/1599/pdf-vor
2. https://core.ac.uk/download/pdf/293048893.pdf
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