I am looking to deposit a single-layer titanium nitride layer with a sheet resistance of approximately 60 ohms and a layer of TiNx (x value should be in the range of 0.8 to 1.2).
The developed layer will have potential applications in buildings and facades. Could anyone suggest in which way the layer development is needed to process the deposition using the DC magnetron sputter coating system?
Do you really want to deposit a single layer, which would be one layer of atoms, or do you mean something else? Depositing closed layers by sputtering gets increasingly harder for thinner films and I'm not sure you can do a single layer.
When it comes to the stoichiometry, a temperature and pressure variation as it was done here might be what you are looking for:
Article Pressure and Temperature Effects on Stoichiometry and Micros...
TiNx with the desired properties using a DC magnetron sputter coating system, adjust the nitrogen-to-argon gas flow to control stoichiometry, and adjust the power to achieve desired sheet resistance. Post-deposition annealing may be required to reach the ideal 'x' value and electrical characteristics. Further optimization should be carriedout depend on your vacuum system.
Dear chadrasekhar loka,
Thanks for the answer, as we have observed the deposited single-layer TINx coatings at room temperature with DC mode give resistance, whereas the same sample after annealing does not show any resistance and electrical properties.
What do you mean by "no properties"? Do you mean that it's out of range for your detector? Upward or downward? Because everything has a resistance and electrical properties.
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