Hi experts,

Recently I am trying to use the “heavyion” function of sentaurus TCAD to simulate the charge pairs generated from a single event radiation, and how they drift in the diamond device. So I want to use a quasi-stationary simulation to get the e field of the device, and make it fixed, then use a transient simulation to simulate how the carriers drift in such field and what is the induced current.

Can anyone briefly tell me how to define a time independent fixed e field in transient simulation? Thank you very much!

cheers

huazhen

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