That's strange. Assuming that this DC bias is the selfbias voltage of the sputtering process, it should be correlated to the ablation rate from the target. Have you checked if eventually there is a short circuit somewhere in your chamber so that your power goes to the wrong place, eventually?
The DC bias voltage is not supposed to be minimized, as I said, in a properly functioning setup the selfbias voltage is correlated to the ablation rate from your target. Therefore an increase of the selfbias while keeping target-substrate-distance and other geometric parameters constant should actually result in an increased deposition rate.
Usually your matching should bring the reflected power down to zero, having finite values there has been associated with poor reproducibility at least for my setup.
Hi Nitesh Singh. I am not as expert as Sir Jürgen Weippert, but since I am recently going through these types of problems, maybe we can solve the problem together.
For the deposition, stable plasma is necessary. The plasma stability depends on the bias voltage, but along with it, it also depends on the proper flow of gas. Therefore check if the gas flow is stable or not.
As recommended by the Engineers of our system, you must check the connections not only outside but also in the system. If possible, check for grounding also. Is it proper or not?
As already stated by Jürgen Weippert Sir, the matching network only fixes the reflected power (in our case also). The DC supply adjusts itself while obtaining plasma. Therefore, you perform the matching for low reflected power only and try to get stable plasma.
yes the rf power to the target should be delivered and there should be perfect impedance matching. This will give you a good value of DC self bias voltage, and effective sputtering as Mr. Jurgen has mentioned.
You dont apply DC bias voltage,
It is a self biased developed getting developed on its own.
Well sputtering pressure can influence the self bias DC voltage. Try varying the sputtering, but always ensure 0W reflected power.