I want to use the n-type Si wafer coated with a 300 nm SiO2 layer for the OFET device, but for that, I have to check the leakage current of the dielectric layer. how?
If you want to determine the bulk leakage current at a certain applied voltage difference due to your SiO2 layer on top of n-type Si layer, you will need to make a guarded current measurement so that you exclude surface leakage currents, see the attached figure. The top electrodes consist of an outer annular (ring) electrode surrounding (guarding) a circular inner electrode. The annular electrode intercepts the surface currents so that the inner circular electrode only receives (measures) bulk leakage currents.