Do you know a model to describe the implantation process of specific ions into a semiconductor, like TiO2 or another type, in order we can characterise the penetration depth of the dopant with the applied energy in the ion sputter gun, and the possible way that the ions to distribute into the sample, etc? I found the SRIM model but it does take in consideration that the substrate is amorphous and this is not always the case.
Ion implantation can be calculated using TRIM-C or the successor, SRIM. Check
http://www.srim.org/
for more details. Cheers, Dirk
In principle you can also calculate the depth distribution for a crystalline matrix using SRIM. You can either choose the matrix configuration from the predefined set of different types of implant targets or you set it up yourself using its stoichiometry and density.
Depending on the type of implant you can afterwards either use SIMS or GIXRF for characterization of your implants. I did this before for a couple different ion implantations. Check my publications if you are interested.
I've already used SRIM, but it does the assumption the material crystalline structure is amorphous. So, I would say if it does not follow this assumption, it is not correct to apply it?
Well, I guess that channeling etc are not so important for a polycrystalline sample. But in fact, if you have a single-crystalline substrate and the direction of the incident beam is chosen in an "unfavourable" way, then the projectiles may penetrate deeply into the crystal, and the implant depth profile looks very different from what one would predict with SRIM ...
Hi Marina - you are correct that SRIM does not calculate profiles for crystalline materials. In the past I have found only a few simulators that had this capability, but they are not commercially available. Two resources to try are 1) UT-Marlowe at UT Austin (started by Dr. Al Tasch) & Dr. Kevin Jones at the Univ. of Florida. Best Wishes.
If you want to obtain absolute concentration of your dopant as function of depth, RBS (Rutherford Backscattering Spectrometry) gives excellent results. It involves scattering of high-energy (several MeV) ions from the semiconductor surface, and depths of up to several microns can be probed in this way. Many university labs will do this for a small fee.
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